N302AP

ISL9N302AP3 January 2002 ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.0019Ω (Typ), VGS = 10V rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V Qg (Typ) = 110nC, VGS = 5V Qgd (Typ) = 31nC CISS (Typ) = 11000pF Applications DC/DC converters SOURCE DRAIN GATE D G DRAIN (FLANGE) S TO-220AB MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Pulsed Power dissipation Derate above 25oC Operating and Storage Temperature Ratings 30 ±20 75 75 Figure 4 345 2.3 -55 to 175 Units V V A A A W W/oC oC ID PD TJ, TSTG Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case TO-220 Thermal Resistance Junction to Ambient TO-220 0.43 62 oC/W oC/W Package Marking and Ordering Information Device Marking N302AP Device ISL9N302AP3 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 ©2002 Fairchild Semiconductor Corporation Rev. B January 2002 ISL9N302AP3 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Condition...