N302AS

ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features Fast switching rDS(ON) = 0.0019Ω (Typ), VGS = 10V rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V Qg (Typ) = 110nC, VGS = 5V Qgd (Typ) = 31nC CISS (Typ) = 11000pF Applications DC/DC converters DRAIN (FLANGE) D GATE SOURCE G S TO-263AB MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 75 75 28 Figure 4 345 2.3 -55 to 175 A A A A W W/oC o Ratings 30 ±20 Units V V C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.43 62 43 o o o C/W C/W C/W Package Marking and Ordering Information Device Marking N302AS Device ISL9N302AS3ST Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units ©2002 Fairchild Semi...