NCD57255

DATA SHEET www.onsemi.com Isolated Dual Channel IGBT/MOSFET Gate Driver NCD57252, NCD57253, NCD57255, NCD57256, NCV57252, NCV57253, NCV57255, NCV57256 NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide body SOIC−16 and narrow body SOIC−16 package. Features High Peak Output Current (±6.5 A*, ±3.5 A*) Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge Driver Programmable Overlap or Dead Time control Disable Pin to Turn Off Outputs for Power Sequencing ANB Function to Offer Flexibility to Set up the Driver as Half−bridge Driver Operating with a Single Input Signal IGBT/MOSFET Gate Clamping during Short Circuit Short Propagation Delays with Accurate Matching Tight UVLO Thresholds on all Power Supplies 3.3 V, 5 V, and 15 V Logic Input 2.5 or 5 kVrms* Galvanic Isolation from Input to each Output and 1.5 kVrms Differential Voltage between Output Channels 1200 V Working Voltage (per VDE0884−11 Requirements) High Common Mode Transient Immunity NCV Prefix for Automotive and Other Applications Requiring Unique...