MOSFET. NCE2025S Datasheet

NCE2025S Datasheet PDF


Part NCE2025S
Description N-Channel Enhancement Mode Power MOSFET
Feature http://www.ncepower.com Pb Free Product NCE2025S NCE N-Channel Enhancement Mode Power MOSFET Descr.
Manufacture NCE Power Semiconductor
Datasheet
Download NCE2025S Datasheet


http://www.ncepower.com Pb Free Product NCE2025S NCE N-Cha NCE2025S Datasheet




NCE2025S
http://www.ncepower.com
Pb Free Product
NCE2025S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2025S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =20V,ID =25A
RDS(ON) < 4m@ VGS=4.5V
RDS(ON) < 6m@ VGS=2.5V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Schematic diagram
Application
DC/DC Converter
Battery protection
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE2025S
NCE2025S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TA=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±12
25
17.7
140
2.5
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
50 /W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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NCE2025S
http://www.ncepower.com
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
RDS(ON)
gFS
VGS=4.5V, ID=20A
VGS=2.5V, ID=18A
VDS=5V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=10V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=10V, RL=0.5
VGS=4. 5V,RGEN=3
VDS=10V,ID=20A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=25A
IS
Pb Free Product
NCE2025S
Min Typ Max Unit
20 -
-
V
- - 1 μA
- - ±100 nA
0.5 0.75
- 3.5
4.2
60 -
1.2
4
6
-
V
m
S
- 5300
- 785
- 629
-
-
-
PF
PF
PF
- 10
- 12
- 50
- 20
- 64.9
- 6.5
- 13.8
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
25
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0






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