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NCE4614 MOSFET Datasheet PDFN and P-Channel Enhancement Mode Power MOSFET N and P-Channel Enhancement Mode Power MOSFET |
Part Number | NCE4614 |
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Description | N and P-Channel Enhancement Mode Power MOSFET |
Feature | http://www. ncepower. com Pb Free Product NCE4614 N and P-Channel Enhancement M ode Power MOSFET Description The NCE461 4 uses advanced trench technology to pr ovide excellent RDS(ON) and low gate ch arge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applic ations. General Features • N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS =10V RDS(ON) < 29mΩ @ VGS=4. 5V N-cha nnel P-channel Schematic diagram • P-Channel VDS =-40V,ID = -7A RDS(ON) < 35mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VG S=-4. 5V • High power and current hand ing capability • Lead free p . |
Manufacture | NCE Power Semiconductor |
Datasheet |
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Part Number | NCE4614 |
---|---|
Description | N and P-Channel Enhancement Mode Power MOSFET |
Feature | http://www. ncepower. com Pb Free Product NCE4614 N and P-Channel Enhancement M ode Power MOSFET Description The NCE461 4 uses advanced trench technology to pr ovide excellent RDS(ON) and low gate ch arge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applic ations. General Features • N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS =10V RDS(ON) < 29mΩ @ VGS=4. 5V N-cha nnel P-channel Schematic diagram • P-Channel VDS =-40V,ID = -7A RDS(ON) < 35mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VG S=-4. 5V • High power and current hand ing capability • Lead free p . |
Manufacture | NCE Power Semiconductor |
Datasheet |
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