NCE4614

http://www.ncepower.com Pb Free Product NCE4614 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V N-channel P-channel Schematic diagram ● P-Channel VDS =-40V,ID = -7A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width NCE4614 NCE4614 SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Quantity 2500 units Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TA=25℃ TA=70℃ Maximum Power Dissipation TA=25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG N-Channel 40 ±20 8 6 40 2.0 -55 To 150 P-Channel -40 ±20 -7 -5.5 -30 2.0 -55 To 150 Unit V V A A W ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE4614 Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) Thermal Resistance,Junction-to-Ambient (Note2) RθJA RθJA N-Ch P-Ch 6...