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NCE6003 Datasheet

Part Number NCE6003
Manufacturers NCE Power
Logo NCE Power
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE6003 DatasheetNCE6003 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE6003 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired .

  NCE6003   NCE6003






Part Number NCE6007S
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Datasheet NCE6003 DatasheetNCE6007S Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE6007S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V (Typ:24mΩ) RDS(ON) < 35mΩ @ VGS=4.5V (Typ:27mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge t.

  NCE6003   NCE6003







Part Number NCE6005S
Manufacturers NCE Power
Logo NCE Power
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE6003 DatasheetNCE6005S Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE6005S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V (Typ:38mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switc.

  NCE6003   NCE6003







Part Number NCE6005R
Manufacturers NCE Power
Logo NCE Power
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE6003 DatasheetNCE6005R Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE6005R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V (Typ:38mΩ) D G S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply SOT-223-3L view P.

  NCE6003   NCE6003







Part Number NCE6005AS
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Datasheet NCE6003 DatasheetNCE6005AS Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE6005AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformit.

  NCE6003   NCE6003







Part Number NCE6005AR
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Datasheet NCE6003 DatasheetNCE6005AR Datasheet (PDF)

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  NCE6003   NCE6003







NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE6003 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●Battery Switch ●DC/DC Converter SOT-23 -3L top view Package Marking And Ordering Information Device Marking Device Device Package 6003 NCE6003 SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 60 ±20 3 10 1.7 -55 To 150 73.5 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V Min Typ Max Unit 60 - - V - - 1 μA Wuxi NCE.


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