NCE6005R

http://www.ncepower.com Pb Free Product NCE6005R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） D G S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply SOT-223-3L view Package Marking and Ordering Information Device Marking Device Device Package NCE6005R NCE6005R SOT-223-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Note 2) RθJA Limit 60 ±20 5 3.5 20 2 -55 To 150 62.5 Unit V V A A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V Min Typ Max Unit 60 69 -- 1 V μA Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Gate-Body Leakage Current On Charact...