NCE6020L

http://www.ncepower.com Pb Free Product NCE6020L NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE6020L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-251S top view Package Marking And Ordering Information Device Marking Device Device Package NCE6020L NCE6020L TO-251S Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) EAS Limit 60 ±20 20 14 60 40 0.27 72 Unit V V A A A W W/℃ mJ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE6020L Operating Junction and Storage Temperature Range Thermal Characteristic Therm...