NCE65T680D,NCE65T680,NCE65T680F
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use ...
NCE65T680D,NCE65T680,NCE65T680F
N-Channel Super Junction Power
MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction
MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high
voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
VDS RDS(ON)TYP ID
650 600
7
V mΩ A
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65T680D
TO-263
NCE65T680D
NCE65T680
TO-220
NCE65T680
NCE65T680F
TO-220F
NCE65T680F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum R...