NCE7559K

http://www.ncepower.com NCE7559K Pb-Free Product NCE N-Channel Enhancement Mode Power MOSFET General Description The NCE7559k uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Product Summary BVDSS typ. RDS(ON) typ. max. ID 84 7.2 8.5 59 V mΩ mΩ A Features ● VDS=75V；ID=59A@ VGS=10V； RDS(ON)<8.5mΩ @ VGS=10V ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation 100% UIS TESTED! Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package NCE7559K NCE7559K TO-252-2L Reel Size - Tape width - Quantity - Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Derating factor Single pulse avalanche energy (Note 2) Operating Junction and Storage Temperature Range Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) PD EAS TJ,TSTG Value 7...