http://www.ncepower.com
NCE7580
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The N...
http://www.ncepower.com
NCE7580
Pb-Free Product
NCE N-Channel Enhancement Mode Power
MOSFET
General Description
The NCE7580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
Product Summary
BVDSS typ. RDS(ON) typ.
max. ID
84 6.5 8.0 80
V mΩ mΩ A
Features ● VDS=75V;ID=80A@ VGS=10V;
RDS(ON)<8mΩ @ VGS=10V ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
100% UIS TESTED!
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE7580
7580
TO-220-3L
Reel Size -
Tape width -
Quantity -
Table 1. Absolute Maximum Ratings (TA=25℃) Parameter
Drain-Source
Voltage (VGS=0V) Gate-Source
Voltage (VDS=0V) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Peak diode recovery
voltage Maximum Power Dissipation(Tc=25℃) Derating factor Single pulse avalanche energy (Note 2) Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited b...