MOSFET. NCE7580D Datasheet

NCE7580D Datasheet PDF


Part Number

NCE7580D

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
PDF Download
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NCE7580D Datasheet
http://www.ncepower.com
Pb Free Product
NCE7580D
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE7580D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
General Features
VDS = 75V,ID =80A
RDS(ON) <8m@ VGS=10VTyp6.5m
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Schematic diagram
Marking and pin assignment
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7580D
NCE7580D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Drain-Source Voltage
Parameter
Symbol
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
ID (100)
IDM
PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
75
±25
80
60
320
170
15
1.13
580
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2

NCE7580D Datasheet
http://www.ncepower.com
Pb Free Product
NCE7580D
Thermal Characteristic
Thermal Resistance,Junction-to- Case (Note 2)
RθJc 0.88 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±25V,VDS=0V
75 84
-
--
1
- - ±100
V
μA
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=30A
VDS=5V,ID=30A
2 2.85
- 6.5
- 60
4
8
-
V
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
4400
340
260
PF
PF
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
VDS=30V,ID=30A,
VGS=10V
17.8
11.8
56
14.6
100
20
30
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
VSD
VGS=0V,IS=40A
- - 1.2
V
IS
--
80
A
trr Tj=25,ISD=40A,VGS=0V
36 nS
Qrr Tj=25,IF=75A,di/dt=100A/μs
56 nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=50V,VG=10V,L=0.5mH, ID=62A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.2


Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE7580D NCE N-Channel Enhancement Mo de Power MOSFET Description The NCE7580 D uses advanced trench technology and d esign to provide excellent RDS(ON) with low gate charge. This device is suitab le for use in PWM, load switching and g eneral purpose applications. General F eatures ● VDS = 75V,ID =80A RDS(ON) < 8mΩ @ VGS=10V(Typ:6.5mΩ) ● Special process technology for high ESD capability ● Special designed for Co nvertors and power controls ● High de nsity cell design for ultra low Rdson Fully characterized Avalanche voltag e and current ● Good stability and un iformity with high EAS ● Excellent pa ckage for good heat dissipation Applica tion ● Power switching application Hard Switched and High Frequency Circ uits ● Uninterruptible Power Supply Schematic diagram Marking and pin assig nment TO-263-2L top view Package Mark ing and Ordering Information Device Ma rking Device Device Package NCE7580D NCE7580D TO-263-2L Reel Size - Tape width - Quan.
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