NCE75H26T

http://www.ncepower.com Pb Free Product NCE75H26T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H26T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =75V,ID =260A RDS(ON) < 3mΩ @ VGS=10V （Typ：2.3 mΩ） Schematic diagram ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE75H26T NCE75H26T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 3) EAS Peak Diode Recovery dv/dt (Note 4) dv/dt Limit 75 ±20 260 200 1060 385 2.57 2200 13 Unit V V A A A W W/℃ mJ V/ns Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.c...