NCE75H35T

http://www.ncepower.com Pb Free Product NCE75H35T NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE75H35T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. GENERAL FEATURES ● VDSS =75V,ID =350A RDS(ON) < 2.5mΩ @ VGS=10V （Typ：1.9 mΩ） Schematic diagram ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Excellent package for good heat dissipation Application ● Automotive applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-247 top view Package Marking And Ordering Information Device Marking Device Device Package NCE75H35T NCE75H35T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 3) EAS Peak Diode Recovery dv/dt (Note 4) dv/dt Operating Junction and Storage Temperature Range TJ,TSTG Limit 75 ±20 350 270 1280 460 3.07 3500 13 -55 To 175 Unit V V A A A W W/℃ mJ V/ns ℃ ...