NCE8098

http://www.ncepower.com Pb Free Product NCE8098 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE8098 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =80V,ID =98A RDS(ON) < 7.5mΩ @ VGS=10V (Typ:6mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking Device Device Package NCE8098 NCE8098 TO-220 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit 80 ±20 98 70 520 200 1.33 800 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE8098 T...