|
|
MOSFET. NCE80R1K2I Datasheet |
|
|
|
NCE80R1K2I,NCE80R1K2K
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS
RDS(ON) TYP。
ID
800
1000
5
V
mΩ
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE80R1K2I
TO-251
NCE80R1K2I
NCE80R1K2K
TO-252
NCE80R1K2K
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
IDM (pluse)
Maximum Power Dissipation(Tc=25℃)
PD
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
EAS
IAR
EAR
TO-251
TO-252
Value
800
±30
5
3
15
81
0.65
75
2.5
0.4
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
Preview
|
NCE80R1K2I,NCE80R1K2K
Parameter
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt，VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient （Maximum）
Symbol
dv/dt
dv/dt
TJ,TSTG
Symbol
RthJC
RthJA
Value
50
5
-55...+150
Value
1.54
62
Unit
V/ns
V/ns
°C
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=800V,VGS=0V
VDS=800V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±30V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2.5A
Dynamic Characteristics
Forward Transconductance
gFS VDS = 20V, ID = 2.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=480V,ID=5A,
Qgs
VGS=10V
Qgd
Intrinsic gate resistance
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=480V,ID=2.5A,
RG=15Ω,VGS=10V
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward On Voltage
VSD Tj=25°C,ISD=5A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
Peak Reverse Recovery Current
Irrm
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Min Typ
800
2.5 3
1000
5.5
680
55
3.5
14.5
2.8
5.5
2
7
5
70
9
0.85
240
2.2
16
Max
1
100
±100
3.5
1200
22
85
15
5
15
1.2
Unit
V
μA
μA
nA
V
mΩ
S
pF
pF
pF
nC
nC
nC
Ω
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
Preview
|
NCE80R1K2I,NCE80R1K2K
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
http://www.ncepower.com
Preview
|
|
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |
