NCE85H15T

http://www.ncepower.com Pb Free Product NCE85H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =85V,ID =150A RDS(ON) <4.8mΩ @ VGS=10V (Typ:3.9mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for Convertors and power controls ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE85H15T NCE85H15T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Peak diode recovery voltage ID (100℃) IDM PD dv/dt Derating factor Single pulse avalanche energy (Note 5) EAS Limit 85 ±20 150 106 600 270 15 1.8 1100 Unit V V A A A W V/ns W/℃ mJ Wuxi NCE Power Semiconducto...