NCE85H21T

http://www.ncepower.com Pb Free Product NCE85H21T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =85V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V Schematic diagram ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE85H21T NCE85H21T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 3) EAS Peak Diode Recovery dv/dt (Note 4) dv/dt Operating Junction and Storage Temperature Range TJ,TSTG Limit 85 ±20 210 150 850 330 2.2 2200 5 -55 To 175 Unit V V A A A W W/℃ mJ V/ns ℃ Wuxi NCE Power Sem...