Power MOSFET. NCE85H21TC Datasheet

NCE85H21TC Datasheet PDF


Part Number

NCE85H21TC

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power Semiconductor

Total Page 7 Pages
Datasheet
Download NCE85H21TC Datasheet



NCE85H21TC
http://www.ncepower.com
Pb Free Product
NCE85H21TC
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21TC uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
VDSS =85V,ID =210A
RDS(ON) < 3.9m@ VGS=10V
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Schematic diagram
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
100% UIS TESTED!
100% Vds TESTED!
Marking and pin assignment
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H21TC
NCE85H21TC
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
85
±20
210
150
850
330
2.2
2200
5
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
V/ns
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1

NCE85H21TC
http://www.ncepower.com
Pb Free Product
NCE85H21TC
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.45 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=85V,VGS=0V
VGS=±20V,VDS=0V
85 -
-
V
- - 1 μA
- - ±200 nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2 3.2
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
- 3.4 3.9
m
Forward Transconductance
gFS
VDS=25V,ID=40A
100 165
-
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 7200
- 640
-
-
PF
PF
Crss
- 487
-
PF
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
ID=30A,VDD=30V,VGS=10V
-
-
-
-
-
-
-
15
124
84
78
180
34.5
70
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=40A
- - 1.2
V
trr
TJ = 25°C, IF = 40A
- 58
-
nS
Qrr
di/dt = 100A/μs(Note2)
- 87
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t 10 sec.
2. Pulse Test: Pulse Width 400μs, Duty Cycle 2%.
3. EAS conditionTj=25,VDD=42.5V,VG=10V,L=2mH,Rg=25,IAS=37A
4. ISD125A, di/dt260A/μs, VDDV(BR)DSSTJ 175°C
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.1




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