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NCEP01T13A Datasheet

Part Number NCEP01T13A
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP01T13A DatasheetNCEP01T13A Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCEP01T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features ● VDS =100V,ID =130A RDS(O.

  NCEP01T13A   NCEP01T13A






Part Number NCEP01T13D
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP01T13A DatasheetNCEP01T13D Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCEP01T13D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =135A RDS(ON) <4.5mΩ @ VGS=10V .

  NCEP01T13A   NCEP01T13A







Part Number NCEP01T13B
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP01T13A DatasheetNCEP01T13B Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCEP01T13B NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =135A RDS(ON) <4.3mΩ @ VGS=10V .

  NCEP01T13A   NCEP01T13A







Part Number NCEP01T13AD
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP01T13A DatasheetNCEP01T13AD Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCEP01T13AD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =130A RDS(ON) <4.6mΩ @ VGS=10.

  NCEP01T13A   NCEP01T13A







Part Number NCEP01T13
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP01T13A DatasheetNCEP01T13 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCEP01T13 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =135A RDS(ON) <4.5mΩ @ VGS=10V ● .

  NCEP01T13A   NCEP01T13A







N-Channel Super Trench Power MOSFET

http://www.ncepower.com Pb Free Product NCEP01T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features ● VDS =100V,ID =130A RDS(ON) <4.6mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Marking and pin assignment Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP01T13A NCEP01T13A .


2018-06-03 : NCEP12T15    NCEP12T13A    NCEP1590    NCEP15T11A    1N5266B    1N5263B    1N5264B    1N5260B    1N5261B    1N5257B   


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