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NCEP60T18 Datasheet

Part Number NCEP60T18
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP60T18 DatasheetNCEP60T18 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCEP60T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features ● VDS =60V,ID =180A RDS(ON) .

  NCEP60T18   NCEP60T18






Part Number NCEP60T15K
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP60T18 DatasheetNCEP60T15K Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCEP60T15K NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =150A RDS(ON) < 3.4mΩ @ VGS=10V .

  NCEP60T18   NCEP60T18







Part Number NCEP60T15AG
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP60T18 DatasheetNCEP60T15AG Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCEP60T15AG NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =150A RDS(ON) < 3.0mΩ @ VGS=1.

  NCEP60T18   NCEP60T18







Part Number NCEP60T12K
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP60T18 DatasheetNCEP60T12K Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCEP60T12K NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =120A RDS(ON) < 4.0mΩ @ VGS=10V .

  NCEP60T18   NCEP60T18







Part Number NCEP60T12AK
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
Datasheet NCEP60T18 DatasheetNCEP60T12AK Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCEP60T12AK NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =120A RDS(ON) < 4.0mΩ @ VGS=10.

  NCEP60T18   NCEP60T18







N-Channel Super Trench Power MOSFET

http://www.ncepower.com Pb Free Product NCEP60T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features ● VDS =60V,ID =180A RDS(ON) < 2.9mΩ @ VGS=10V (Typ:2.5mΩ) ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Marking and pin assignment Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP60T18 NC.


2018-06-03 : NCEP12T15    NCEP12T13A    NCEP1590    NCEP15T11A    1N5266B    1N5263B    1N5264B    1N5260B    1N5261B    1N5257B   


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