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NCP511 Regulator Datasheet PDFLow-Dropout Voltage Regulator Low-Dropout Voltage Regulator |
| Part Number | NCP511 |
|---|---|
| Description | Low-Dropout Voltage Regulator |
| Feature | NCP511, NCV511
Voltage Regulator - CMOS, Low Iq, Low-Dropout
150 mA
The NCP511 series of fixed output low dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. The NCP511 series features an ultra−low quiescent current of 40 mA. Each device contains a voltage reference unit, an error amplifier, a PMOS power transistor, resistors for setting output voltage, current limit, and temperature limit protection circuits. The NCP511 has been designed to be used with low cost ceramic capacitors and requ. |
| Manufacture | ON |
| Datasheet |
| Part Number | NCP511 |
|---|---|
| Description | Low-Dropout Voltage Regulator |
| Feature | NCP511, NCV511
Voltage Regulator - CMOS, Low Iq, Low-Dropout
150 mA
The NCP511 series of fixed output low dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. The NCP511 series features an ultra−low quiescent current of 40 mA. Each device contains a voltage reference unit, an error amplifier, a PMOS power transistor, resistors for setting output voltage, current limit, and temperature limit protection circuits. The NCP511 has been designed to be used with low cost ceramic capacitors and requ. |
| Manufacture | ON |
| Datasheet |
| Part Number | NCP51199 |
|---|---|
| Description | Termination Regulator |
| Feature | NCP51199, NCV51199
DDR 2-Amp Source / Sink VTT Termination Regulator
The NCP/NCV51199 is a linear regulator designed to supply a regulated VTT termination voltage for DDR−2 and DDR−3 memory applications. The regulator is capable of actively sourcing and sinking ±2 A peak currents for DDR−2, and DDR−3 up to ±1. 5 A while regulating the VTT output voltage to within ±10 mV. The output termination voltage is regulated to track VDDQ / 2 by two external voltage divider resistors connected to the PVCC, GND, and VREF pins. The NCP/NCV51199 incorporates a high−speed differential amplifier to provide ul. |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part Number | NCP51199 |
|---|---|
| Description | Termination Regulator |
| Feature | NCP51199, NCV51199
DDR 2-Amp Source / Sink VTT Termination Regulator
The NCP/NCV51199 is a linear regulator designed to supply a regulated VTT termination voltage for DDR−2 and DDR−3 memory applications. The regulator is capable of actively sourcing and sinking ±2 A peak currents for DDR−2, and DDR−3 up to ±1. 5 A while regulating the VTT output voltage to within ±10 mV. The output termination voltage is regulated to track VDDQ / 2 by two external voltage divider resistors connected to the PVCC, GND, and VREF pins. The NCP/NCV51199 incorporates a high−speed differential amplifier to provide ul. |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part Number | NCP51198 |
|---|---|
| Description | 1.5A DDR Memory Termination Regulator |
| Feature | 1. 5A DDR Memory Termination Regulator NCP51198, NCV51198 The NCP/NCV51198 is a simple, cost−effective, high−speed linear regulator designed to generate the VTT termination voltage rail for DDR−I, DDR−II and DDR−III memory. The regulator is capable of actively sourcing or sinking up to ±1. 5 A for DDR−I, or up to ±0. 5 A for DDR−II /−III while regulating the output voltage to within ±30 mV. The output termination voltage is tightly regulated to track VTT = (VDDQ / 2) over the entire current range. The NCP/NCV51198 incorporates a high−speed differential amplifier to provide ultra−fast response to . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part Number | NCP51198 |
|---|---|
| Description | 1.5A DDR Memory Termination Regulator |
| Feature | 1. 5A DDR Memory Termination Regulator NCP51198, NCV51198 The NCP/NCV51198 is a simple, cost−effective, high−speed linear regulator designed to generate the VTT termination voltage rail for DDR−I, DDR−II and DDR−III memory. The regulator is capable of actively sourcing or sinking up to ±1. 5 A for DDR−I, or up to ±0. 5 A for DDR−II /−III while regulating the output voltage to within ±30 mV. The output termination voltage is tightly regulated to track VTT = (VDDQ / 2) over the entire current range. The NCP/NCV51198 incorporates a high−speed differential amplifier to provide ultra−fast response to . |
| Manufacture | ON Semiconductor |
| Datasheet |
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