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NDB7052 Datasheet

Part Number NDB7052
Manufacturers Fairchild
Logo Fairchild
Description N-Channel MOSFET
Datasheet NDB7052 DatasheetNDB7052 Datasheet (PDF)

June 1997 NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low vol.

  NDB7052   NDB7052






Part Number NDB7052L
Manufacturers Fairchild
Logo Fairchild
Description N-Channel MOSFET
Datasheet NDB7052 DatasheetNDB7052L Datasheet (PDF)

May 1997 NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particu.

  NDB7052   NDB7052







Part Number NDB7051L
Manufacturers Fairchild
Logo Fairchild
Description N-Channel MOSFET
Datasheet NDB7052 DatasheetNDB7051L Datasheet (PDF)

September 1996 NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are p.

  NDB7052   NDB7052







Part Number NDB7051
Manufacturers Fairchild
Logo Fairchild
Description N-Channel MOSFET
Datasheet NDB7052 DatasheetNDB7051 Datasheet (PDF)

August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage .

  NDB7052   NDB7052







Part Number NDB7050L
Manufacturers Fairchild
Logo Fairchild
Description N-Channel MOSFET
Datasheet NDB7052 DatasheetNDB7050L Datasheet (PDF)

March 1996 NDP7050L / NDB7050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are parti.

  NDB7052   NDB7052







N-Channel MOSFET

June 1997 NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 75 A, 50 V. RDS(ON) = 0.01 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP7052 50 50 ±20 ±40 75 225 150 1 -65 to 175 NDB7052 Units V V V Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Con.


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