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NDB708BE MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

Part Number NDB708BE
Description N-Channel MOSFET
Feature May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC.
Manufacture Fairchild
Datasheet
Download NDB708BE Datasheet
Part Number NDB708BE
Description N-Channel MOSFET
Feature May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC.
Manufacture Fairchild
Datasheet
Download NDB708BE Datasheet

NDB708BE

NDB708BE
NDB708BE   NDB708BE

 

 

 

 


 

Part Number NDB708BE
Description N-Channel MOSFET
Feature May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC.
Manufacture Fairchild
Datasheet
Download NDB708BE Datasheet
Part Number NDB708BE
Description N-Channel MOSFET
Feature May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC.
Manufacture Fairchild
Datasheet
Download NDB708BE Datasheet

NDB708BE

NDB708BE
NDB708BE   NDB708BE

 

 

 

 

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