NDH834P

May 1997 NDH834P P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed. Features -5.6 A, -20 V. RDS(ON) = 0.035 Ω @ VGS = -4.5 V RDS(ON) = 0.045 Ω @ VGS = -2.7V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C unless otherwise noted NDH834P -20 ±8 (Note 1a) Units V V A -5.6 -15 Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) 1.8 1 0.9 -55 to 150 W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RqJA RqJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) ...