NDH8503N Datasheet PDF

May 1997 NDH8503N Dual N-Channel Enhancement Mode Field Effect Transistor General Description SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, and oth.

May 1997 NDH8503N Dual N-Channel Enhancement Mode Field Effect Transistor General Description SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, and oth.