DatasheetsPDF.com

NDS8839H Datasheet

Part Number NDS8839H
Manufacturers Fairchild
Logo Fairchild
Description Complementary MOSFET
Datasheet NDS8839H DatasheetNDS8839H Datasheet (PDF)

March 1996 NDS8839H Complementary MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications.

  NDS8839H   NDS8839H






Complementary MOSFET

March 1996 NDS8839H Complementary MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together. Features N-Channel 5.7A, 30V, RDS(ON)=0.045Ω @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.09Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability . ________________________________________________________________________________ V+ P-Gate Vout Vout Vout N -Gate Vout V- Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Single Device) TJ,TSTG T A= 25°C unless otherwise noted N-Channel 30 20 (Note 1a & 2) P-Channel -30 -20 -4 15 2.5 1.2 1 -55 to 150 Units V V A 5.7 15 (Note 1a) (Note 1b) (Note 1c) W Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient (Single Device) Thermal Resistance, Junction-to-Case (S.


2005-05-12 : NTE5586    NTE5587    NTE5588    NTE5589    NTE5590    NTE5591    NTE5592    NTE5593    NTE5597    NTE56   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)