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NDS9948 MOSFET Datasheet PDFDual P-Channel MOSFET Dual P-Channel MOSFET |
 
 
 
Part Number | NDS9948 |
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Description | Dual P-Channel MOSFET |
Feature | February 1996
NDS9948 Dual P-Channel En hancement Mode Field Effect Transistor
General Description
These P-Channel enh ancement mode power field effect transi stors are produced using Fairchild's pr oprietary, high cell density, DMOS tech nology. This very high density process has been especially tailored to minimiz e on-state resistance, provide superior switching performance, and withstand h igh energy pulses in the avalanche and commutation modes. These devices are pa rticularly suited for low voltage appli cations such as notebook computer power management and other battery powered c ircuits where . |
Manufacture | Fairchild |
Datasheet |
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Part Number | NDS9948 |
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Description | 60V Dual P-Channel MOSFET |
Feature | NDS9948
NDS9948
Dual 60V P-Channel Powe rTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advance d PowerTrench process. It has been opti mized for power management applications requiring a wide range of gate drive v oltage ratings (4. 5V – 20V). Applicat ions • Power management • Load swit ch • Battery protection Features †¢ –2. 3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V RDS(ON) = 500 mΩ @ V GS = –4. 5 V • Low gate charge (9nC typical) • Fast switching speed †¢ High performance trench technology fo r extremely low RDS(ON) • High power and curre . |
Manufacture | ON Semiconductor |
Datasheet |
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