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NDT3055L

Fairchild

N-Channel MOSFET

August 1998 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic lev...



NDT3055L

Fairchild


Octopart Stock #: O-474548

Findchips Stock #: 474548-F

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Description
August 1998 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and
More View provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. Features 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 4.5 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S D SOT-223 S G D S G SOT-223* (J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage TA = 25oC unless otherwise noted NDT3055L 60 ±20 (Note 1a) Units V V A Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) 4 25 3 1.3 1.1 -65 to 150 W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W °C/W * Order option J23Z for cropped center drain lead. © 1998 Fairchild Semiconductor Corporation NDT3055L Rev.A1 Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 C VDS = 60 V, VGS = 0 V TJ =125°C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) o 60 55 1 50 100 -100 V mV/o C µA µA nA nA ∆BVDSS/∆TJ IDSS VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 oC VGS = 10 V, ID = 4 A TJ =125°C VGS = 4.5 V, ID = 3.7 A 1 1.6 -4 0.07 0.125 0.103 10 7 ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance 2 V mV /oC ∆VGS(th)/∆TJ RDS(ON) 0.1 0.18 0.12 Ω ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD Notes: On-State Drain Current Forward Transconductance VGS = 5 , VDS = 10 V VDS = 5 V, ID = 4 A VDS = 25, VGS = 0 V, f = 1.0 MHz A S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacit






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