June 1996
NDT452AP P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhanceme...
June 1996
NDT452AP P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low
voltage applications such as notebook computer power management and DC motor control.
Features
-5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current - Continuous - Pulsed PD Maximum Power Dissipation
T A = 25°C unless otherwise noted
NDT452AP -30 ±20
(Note 1a)
Units V V A
-5 - 15
(Note 1a) (Note 1b) (Note 1c)
3 1.3 1.1 -65 to 150
W
TJ,TSTG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
°C/W °C/W
* Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation
NDT452AP Rev. B1
Electrical Characteristics (TA = 25°C unless otherwise note...