NE32484A-T1

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 1.78 ±0.2 1 L L FEATURES Super Low Noise Figure & High Associated Gain Gate Length : Lg ≤ 0.25 µm Gate Width : Wg = 200 µm 1.78 ±0.2 NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz T 2 L 3 L 4 ORDERING INFORMATION SUPPLYING FORM STICK Tape & reel 1000 pcs./reel NE32484A-T1A Tape & reel 5000 pcs./reel L = 1.0 ± 0.2 mm PART NUMBER NE32484A-SL NE32484A-T1 LEAD LENGTH L = 1.7 mm MIN. L = 1.0 ± 0.2 mm MARKING T ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID IG Ptot Tch Tstg 4.0 –3.0 IDSS 100 165 150 –65 to +150 V V mA 1. 2. 3. 4. Source Drain Source Gate µA mW ˚C ˚C RECOMMENDED OPERATING CONDITION (TA = 25 ˚C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm Document No. P11785EJ3V0DS00 (3rd edition) (Previous No. TC-2316) Date Published July 1996 P Printed in Japan © 0.1 1.7 MAX. 0.5 TYP. 0.5 TYP. 1991 NE32484A ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC G...