HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Description
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HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE350184C
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz Micro-X ceramic (84C) package
APPLICATIONS
20 GHz-band DBS LNB Other K-band communication systems
ORDERING INFORMATION
Pa...
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