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NE38018 HJ-FET Datasheet PDFL to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| Part Number | NE38018 |
|---|---|
| Description | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| Feature | PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain NF = 0. 55 dB typ. Ga = 14. 5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0. 4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm ORDERING INFORMATION (PLAN) Part Number NE38018-T1 Quantity 3 kpcs/Reel. Packing Style Embossed tape 8 mm wide. Pin3 (Source), Pin4 (Drain) face to perforation side of the tape. NE38018-T2 3 kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Sou. |
| Manufacture | NEC |
| Datasheet |
| Part Number | NE38018 |
|---|---|
| Description | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| Feature | PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain NF = 0. 55 dB typ. Ga = 14. 5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0. 4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm ORDERING INFORMATION (PLAN) Part Number NE38018-T1 Quantity 3 kpcs/Reel. Packing Style Embossed tape 8 mm wide. Pin3 (Source), Pin4 (Drain) face to perforation side of the tape. NE38018-T2 3 kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Sou. |
| Manufacture | NEC |
| Datasheet |
| Part Number | NE38018 |
|---|---|
| Description | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| Feature | PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain NF = 0. 55 dB typ. Ga = 14. 5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0. 4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm ORDERING INFORMATION (PLAN) Part Number NE38018-T1 Quantity 3 kpcs/Reel. Packing Style Embossed tape 8 mm wide. Pin3 (Source), Pin4 (Drain) face to perforation side of the tape. NE38018-T2 3 kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Sou. |
| Manufacture | NEC |
| Datasheet |
| Part Number | NE38018 |
|---|---|
| Description | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| Feature | PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain NF = 0. 55 dB typ. Ga = 14. 5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0. 4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm ORDERING INFORMATION (PLAN) Part Number NE38018-T1 Quantity 3 kpcs/Reel. Packing Style Embossed tape 8 mm wide. Pin3 (Source), Pin4 (Drain) face to perforation side of the tape. NE38018-T2 3 kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Sou. |
| Manufacture | NEC |
| Datasheet |
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