NE52118-T1

PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) 4-pin super minimold package Grounded Emitter Transistor ORDERING INFORMATION (PLAN) Part Number NE52118-T1 Package 4-pin super minimold Marking V41 Supplying Form Embossed tape 8 mm wide. Pin 3, pin 4 face to perforation side of the tape. Qty 3 kp/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE52118) ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Ratings 5.0 3.0 3.0 7 0.3 30 +125 –65 to +125 Unit V V V mA mA mW °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14544EJ1V0DS00 (1st edition) Date Published November 1999 N CP(K) Printed in Japan © 1999 NE52118 RECOMMENDED OPERATING CONDITIONS (TA = +...