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NEC
NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a h
NE678M04

CEL
NE678M04 NPN SILICON RF TRANSISTOR
NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V,
NE678M04




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