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NE68519 Datasheet

Part Number NE68519
Manufacturers NEC
Logo NEC
Description NONLINEAR MODEL
Datasheet NE68519 DatasheetNE68519 Datasheet (PDF)

www.DataSheet4U.com NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector NE68519 Q1 LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7.0e-16 109 1 15 0.19 7.90e-13 2.19 1 1.08 12.4 Infinity 0 2 1.3 10 8.34 0.009 10 0.4e-12 0.81 0.5 0.18e-12 0.75 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.34 0 0 0.75 0 0.5 2.0e-12 5.2 4.58 0.011 0 1.0e-9.

  NE68519   NE68519






Part Number NE68518
Manufacturers NEC
Logo NEC
Description NONLINEAR MODEL
Datasheet NE68519 DatasheetNE68518 Datasheet (PDF)

NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB LC CCE Collector NE68518 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 15 0.19 7.9e-13 2.19 1 1.08 12.4 Infinity 0 2 1.3 10 8.34 0.009 10 0.4e-12 0.81 0.5 0.18e-12 0.75 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.34 0 0 0.75 0 0.5 2e-12 5.2 4.58 0.011 0 1e-9 1.11 0 3 0 1 UN.

  NE68519   NE68519







Part Number NE68518
Manufacturers CEL
Logo CEL
Description NPN EPITAXIAL SILICON RF TRANSISTOR
Datasheet NE68519 DatasheetNE68518 Datasheet (PDF)

DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) NE68518 / 2SC5015 NPN SILICON RF TRANSISTOR FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low voltage operation • Low noise and high gain • 4-pin super minimold (18) package ORDERING INFORMATION Part Number 2SC5015 2SC5015-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Base), Pin 4 (Emitter) face the .

  NE68519   NE68519







NONLINEAR MODEL

www.DataSheet4U.com NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector NE68519 Q1 LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7.0e-16 109 1 15 0.19 7.90e-13 2.19 1 1.08 12.4 Infinity 0 2 1.3 10 8.34 0.009 10 0.4e-12 0.81 0.5 0.18e-12 0.75 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.34 0 0 0.75 0 0.5 2.0e-12 5.2 4.58 0.011 0 1.0e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 68519 0.13e-12 0.14e-12 0.9e-9 0.9e-9 0.17e-12 0.21e-12 0.19e-9 0.19e-9 0.19e-9 MODEL RANGE Frequency: 0.05 to 3.0 GHz Bias: VCE = 0.5 V to 3.0 V, IC = 0.5 mA to 20 mA (1) Gummel-Poon Model California Eastern Laboratories EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -10/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE .


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