NE68633

SILICON TRANSISTOR NE686 SERIES DISCONTINUED SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz LOW VOLTAGE/LOW CURRENT OPERATION HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz LOW NOISE: 1.5 dB AT 2.0 GHz AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES DESCRIPTION The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator applications. NE686's high fT make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is available in six different low cost plastic surface mount package styles. 18 (SOT 343 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) ELECTRICAL CHARACTERISTICS (TA = 25°C) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68618 2SC5180 18 NE68619 2SC5181 19 NE68630 2SC5179 30 NE68633 2SC5177 33 NE68639/39R 2SC5178/78R 39/39R SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 2 V, IC = 7 mA, f = 2.0 GHz GHz 12 15.5 10 13 7.5 9 10 13 10.5 13.5 fT Gain Bandwidth Product at VCE = 1 V, IC = 5 mA, f = 2.0 GHz GHz 10 13 8.5 12 7 8.5 8.5 12 8.5 12 NFMIN Minimum Noise Figure at VCE = 2 V, IC = 3 mA, f = 2.0 GHz dB 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 NFMIN |S21e...