NE696M01

www.DataSheet4U.com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE696M01 FEATURES HIGH fT: 14 GHz TYP at 3 V, 10 mA LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 TOP VIEW 2.1 ± 0.1 1.25 ± 0.1 0.65 2.0 ± 0.2 1.3 1 6 0.2 (All Leads) 5 T95 SIDE VIEW 2 3 4 DESCRIPTION NEC's NE696M01 is an NPN high frequency silicon epitaxial transistor (NE685) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE696M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations. 0.9 ± 0.1 0.7 0.15 - 0.05 0 ~ 0.1 +0.10 PIN OUT 1. Emitter 2. Emitter 3. Base 4. Emitter 5. Emitter 6. Collector Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT Cre2 |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain at VCE = 3 V, IC = 10 mA Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure...