NGTB25N120FL3WG

IGBT - Ultra Field Stop NGTB25N120FL3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are Pb−Free Devices Typical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter Voltage Collector Current @ TC = 25°C @ TC = 100°C Pulsed Collector Current, Tpulse Limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C Diode Pulsed Current, Tpulse Limited by TJmax Gate−emitter Voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C Operating Junction Temperature Range VCES 1200 V IC A 50 25 ICM 100 A IF A 50 25 IFM 100 A VGE $20 V ±30 PD W 349 174 TJ −55 to +175 °C Storage Temperature Range Lead temperature for soldering, 1/8″ from case for 5 seconds Tstg TSLD −55 to +175 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If ...