NGTB40N120FL3WG

IGBT - Ultra Field Stop NGTB40N120FL3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are Pb−Free Devices Typical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 1200 V IC A 80 40 Pulsed collector current, Tpulse limited by TJmax ICM 160 A Diode forward current @ TC = 25°C @ TC = 100°C IF A 80 40 Diode pulsed current, Tpulse limited IFM by TJmax Gate−emitter voltage VGE Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) Power Dissipation PD @ TC = 25°C @ TC = 100°C 160 A ±20 V ±30 W 454 227 Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8″ from case for 5 seconds TJ Tstg TSLD −55 to +175 °C −55 to +175 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the ...