NGTB40N120IHRWG

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application Reliable and Cost Effective Single Die Solution This is a Pb−Free Device Typical Applications Inductive Heating Consumer Appliances Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax, 10 ms pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse limited by TJmax, 10 ms pulse, VGE = 0 V Gate−emitter voltage Transient Gate−emitter voltage (Tpulse = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C Operating junction temperature range Symbol VCES IC ICM Value 1200 80 40 120 Unit V A A IF A 80 40 IFM 120 A VGE $20 V $25 PD W 384 192 TJ −40 to +175 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +175 260 °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If an...