NJM13003-1.63

DIP Type ■ Features ● High voltage capability ● High speed switching ● Wide SOA ● ROHS compliant NPN Transistors NJM13003-1.63 TO-126 8.00 ±0.30 ø3.20 ±0.10 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 3.90 ±0.10 14.20MAX 11.00 ±0.20 Transistors Unit:mm 3.25 ±0.20 (1.00) (0.50) 1.75 ±0.20 13.06 ±0.30 16.10 ±0.20 2.28TYP [2.28±0.20] #1 2.28TYP [2.28±0.20] 0.50 +0.10 –0.05 1. Base 2. Collector 3. Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 600 400 9 1.5 30 150 -65 to 150 Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Collector- emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Storage Time Falling Time Symbol Test Conditions VCBO Ic= 1mA， IE= 0 VCEO Ic= 10 mA， IB= 0 VEBO IE= 1mA， IC= 0 ICBO VCB= 600 V , IE= 0 ICEO VCE= 400 V , IE= 0 IEBO VEB= 8V , IC=0 IC=0.5A, IB=0.1A VCE(sat) IC=1.5A, IB=0.5A VBE(sat) IC=0.5A, IB=0.1A VCE= 5V, IC= 1mA hFE VCE= 10V, IC= 0.1A VCE= 5V, IC= 1.5A ts VCC= 5V, IC= 0.25A tf Unit V A W ℃ Min Typ Max Unit 600 400 V 9 100 250 uA 10 0.35 0.85 V 1.2 7 10 40 5 1.5 3 us 0.8 www.kexin.com....