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NJW0281G Transistor Datasheet PDF

Silicon NPN Power Transistor

Silicon NPN Power Transistor

 

 

 

Part Number NJW0281G
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor NJW028 1G DESCRIPTION ·High Collector-Emitte r Breakdown Voltage- : V(BR)CEO=250V(Mi n) ·Good Linearity of hFE ·Complement to Type NJW0302G ·Minimum Lot-to-Lot variations for robust device performanc e and reliable operation APPLICATIONS Designed for high fidelity audio ampli fier and other linear applications ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect or-Base Voltage 250 V VCEO Collecto r-Emitter Voltage 250 V VEBO Emitte r-Base Voltage 5 V IC Collector Cur rent-Continuous 15 A IB Base Curren t-Continuous PC Col .
Manufacture Inchange Semiconductor
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Part Number NJW0281G
Description (NJW0281G / NJW0302G) Complementary NPN-PNP Power Bipolar Transistors
Feature NJW0281G (NPN) NJW0302G (PNP) Complemen tary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors.
With superior gain linearity and safe o perating area performance, these transi stors are ideal for high fidelity audio amplifier output stages and other line ar applications.
Features
• Exceptio nal Safe Operating Area
• NPN/PNP Gai n Matching within 10% from 50 mA to 3 A
• Excellent Gain Linearity
• High BVCEO
• High Frequency
• These Devi ces are Pb−Free and are RoHS Complian t Benefits
• Reliable Perfo .
Manufacture ON Semiconductor
Datasheet
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