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NJW0281G Transistor Datasheet PDFSilicon NPN Power Transistor Silicon NPN Power Transistor |
　
　
　
| Part Number | NJW0281G |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | isc Silicon NPN Power Transistor NJW028 1G DESCRIPTION ·High Collector-Emitte r Breakdown Voltage- : V(BR)CEO=250V(Mi n) ·Good Linearity of hFE ·Complement to Type NJW0302G ·Minimum Lot-to-Lot variations for robust device performanc e and reliable operation APPLICATIONS  ·Designed for high fidelity audio ampli fier and other linear applications ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect or-Base Voltage 250 V VCEO Collecto r-Emitter Voltage 250 V VEBO Emitte r-Base Voltage 5 V IC Collector Cur rent-Continuous 15 A IB Base Curren t-Continuous PC Col . |
| Manufacture | Inchange Semiconductor |
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| Part Number | NJW0281G |
|---|---|
| Description | (NJW0281G / NJW0302G) Complementary NPN-PNP Power Bipolar Transistors |
| Feature | NJW0281G (NPN) NJW0302G (PNP)
Complemen tary NPN-PNP Power Bipolar Transistors
These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe o perating area performance, these transi stors are ideal for high fidelity audio amplifier output stages and other line ar applications. Features • Exceptio nal Safe Operating Area • NPN/PNP Gai n Matching within 10% from 50 mA to 3 A • Excellent Gain Linearity • High BVCEO • High Frequency • These Devi ces are Pb−Free and are RoHS Complian t Benefits • Reliable Perfo . |
| Manufacture | ON Semiconductor |
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