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NP100N055PUK Datasheet

Part Number NP100N055PUK
Manufacturers Renesas
Logo Renesas
Description MOS FIELD EFFECT TRANSISTOR
Datasheet NP100N055PUK DatasheetNP100N055PUK Datasheet (PDF)

Preliminary Data Sheet NP100N055PUK MOS FIELD EFFECT TRANSISTOR R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP100N055PUK-E1-AY *1 NP100N055PUK-E2-AY *1 Lead.

  NP100N055PUK   NP100N055PUK






MOS FIELD EFFECT TRANSISTOR

Preliminary Data Sheet NP100N055PUK MOS FIELD EFFECT TRANSISTOR R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP100N055PUK-E1-AY *1 NP100N055PUK-E2-AY *1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Taping (E1 type) Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-263 (MP-25ZP) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2 Tstg IAR EAR Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20  0 V Ratings 55 20 100 400 176 1.8 175 –55 to 175 38 144 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.85 °C/W 83.3 °C/W R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 Page 1 of 6 NP100N055PUK Electrical Characteristi.


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