Preliminary Data Sheet
NP100N055PUK
MOS FIELD EFFECT TRANSISTOR
R07DS0589EJ0100 Rev.1.00
Dec 12, 2011
Description
The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)
Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP100N055PUK-E1-AY *1 NP100N055PUK-E2-AY *1
Lead.
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
NP100N055PUK
MOS FIELD EFFECT TRANSISTOR
R07DS0589EJ0100 Rev.1.00
Dec 12, 2011
Description
The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)
Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP100N055PUK-E1-AY *1 NP100N055PUK-E2-AY *1
Lead Plating Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-263 (MP-25ZP)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2
Tstg IAR EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 RG = 25 , VGS = 20 0 V
Ratings 55 20
100 400 176 1.8 175 –55 to 175
38 144
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
0.85 °C/W 83.3 °C/W
R07DS0589EJ0100 Rev.1.00 Dec 12, 2011
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NP100N055PUK
Electrical Characteristi.