DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP15P04SLG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION The NP15P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP15P04SLG-E1-AY Note NP15P04SLG-E2-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE TO-252 (MP-3ZK)
FEATURES • Super low on-state resistance
RDS(on)1 = 40 mΩ MAX. (VG.
MOS FIELD EFFECT TRANSISTOR
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP15P04SLG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION The NP15P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP15P04SLG-E1-AY Note NP15P04SLG-E2-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE TO-252 (MP-3ZK)
FEATURES • Super low on-state resistance
RDS(on)1 = 40 mΩ MAX. (VGS = −10 V, ID = −7.5 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) • Low input capacitance Ciss = 1100 pF TYP. • Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg IAS EAS
−40 m20 m15 m45 30
1.2
175
−55 to +175 16
25
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −20 V, RG = 25 Ω, VGS = −20 → 0 V
V V A A W W °C °C A mJ
THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
5.0 125
°C/W °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that thi.