NP15P06SLG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP15P06SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP15P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP15P06SLG-E1-AY Note NP15P06SLG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-252 (MP-3ZK) FEATURES Super low on-state resistance RDS(on)1 = 70 mΩ MAX. (VGS = −10 V, ID = −7.5 A) RDS(on)2 = 95 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) Low input capacitance Ciss = 1100 pF TYP. Built-in gate protection diode (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg IAS EAS −60 m20 m15 m45 30 1.2 175 −55 to +175 14 19 Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V V V A A W W °C °C A mJ THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 5.0 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that...