Preliminary Data Sheet
NP160N055TUK
MOS FIELD EFFECT TRANSISTOR
R07DS0592EJ0100 Rev.1.00
Dec 12, 2011
Description
The...
Preliminary Data Sheet
NP160N055TUK
MOS FIELD EFFECT TRANSISTOR
R07DS0592EJ0100 Rev.1.00
Dec 12, 2011
Description
The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)
Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP160N055TUK-E1-AY *1 NP160N055TUK-E2-AY *1
Lead Plating Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-263-7pin (MP-25ZT)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source
Voltage (VGS = 0 V)
VDSS
Gate to Source
Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2
Tstg IAR EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 RG = 25 , VGS = 20 0 V
Ratings 55 20
160 640 250 1.8 175 –55 to 175
51 260
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
0.60 °C/W 83.3 °C/W
R07DS0592EJ0100 Rev.1.00 Dec 12, 2011
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NP160N055TUK
Electrical Characte...