NP16N04YUG

NP16N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A) Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) Designed for automotive application and AEC-Q101 qualified Small size package 8-pin HSON Ordering Information Part No. NP16N04YUG-E1-AY ∗1 NP16N04YUG-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package 8-pin HSON Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) ∗2 Channel Temperature Storage Temperature Repetitive Avalanche Current ∗3 Repetitive Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±16 ±48 36 1.0 175 −55 to +175 13 12 Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) 4.17 150 °C/W °C/W Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 μm) ∗3. Tch(peak) ≤ 150°C, RG = 25 Ω Unit V V A A...