DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HLE, NP22N055ILE, NP22N055SLE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTI...
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HLE, NP22N055ILE, NP22N055SLE
SWITCHING N-CHANNEL POWER
MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated Super low on-state resistance
RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A) Low Ciss : Ciss = 730 pF TYP. Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP22N055HLE NP22N055ILE Note
TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z
NP22N055SLE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage
VDSS
55
Gate to Source
Voltage
VGSS
±20
Drain Current (DC) Drain Current (Pulse) Note1
ID(DC) ID(pulse)
±22 ±55
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 Single Avalanche Energy Note2
PT IAS EAS
45 14 / 5 19 / 25
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
V V A A W W A mJ °C °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.)
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
3.33 125
°C/W °C/W
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