NP50P04SLG

NP50P04SLG -40V – -50A – P-channel Power MOS FET Application : Automotive Datasheet R07DS0241EJ0101 Rev.1.01 May. 20, 2022 Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 9.6 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 15 m Max. ( VGS = -4.5 V, ID = -25 A )  Low input capacitance : Ciss = 3800 pF Typ.  Built-in gate protection diode  Designed for automotive application and AEC-Q101 qualified.  Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 1 2 3 1. Gate 2. Drain 3. Source 4. Drain(Fin) MP-3ZK (TO-252) Absolute Maximum Ratings Gate Source Equivalent circuit Item Symbol Ratings Drain to Source Voltage (VGS = 0 V) VDSS -40 Gate to Source Voltage (VDS = 0 V) VGSS 20 Drain Current (DC) (Tc = 25 °C) ID(DC) 50 Drain Current (pulse) ID(pulse) Notes1 150 Total Power Dissipation (Tc = 25 °C) PT1 84 Total Power Dissipation (Ta = 25 °C) PT2 1.2 Channel Temperature Tch 175 Storage Temperature Tstg -55 to 175 Single Avalanche Current I Notes2 AS 37 Single Avalanche Energy E Notes2 AS 136 Notes 1. PW  10 s , Duty Cycle  1% 2. Starting Tch=25℃ , VDD = -20V , RG = 25  , VGS = -20  0V , L = 100H (Ta=25°C) Unit V V A A W W °C °C A mJ R07DS0241EJ0101 Rev.1.01 May.20.2022 Page 1 of 7 NP50P04SLG Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resis...